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ASW126 数据表(PDF) 2 Page - Advanced Semiconductor Business Inc. |
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ASW126 数据表(HTML) 2 Page - Advanced Semiconductor Business Inc. |
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2 / 11 page ![]() 2/11 ASB Inc. sales@asb.co.kr April 2017 ASW126 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 150 500 900 1750 2000 2400 2700 3500 MHz Gain 24.7 22.6 20.1 15.5 14.4 12.9 11.8 9.6 dB S11 -22 -16 -20 -20 -19 -16 -14 -13 dB S22 -11 -10 -11 -11 -12 -13 -15 -14 dB Noise Figure 3.6 3.8 3.7 3.8 3.9 4.1 4.2 4.3 dB Output IP31) 28.0 30.0 31.0 32.0 33.5 33.5 33.0 33.5 dBm Output P1dB 16.0 16.5 17.0 17.0 17.5 17.5 18.0 17.5 dBm Current 37 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +0 dBm/tone separated by 1 MHz. 2.2 Product Specification Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 900 MHz Gain 19.1 20.1 dB S11 -17 -20 dB S22 -9 -11 dB Noise Figure 3.7 4.0 dB Output IP3 29 31 dBm Output P1dB 16 17 dBm Current 30 37 44 mA Device Voltage +3.3 V 2.3 Pin Configuration Pin Description Simplified Outline 1, 2, 4, 5 Ground 1 2 3 4 5 6 3 RF_IN 6 RF_OUT & Bias |
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