Datasheet

SCS302AP

SiC Schottky Barrier Diode

Outline

650V

TO-220ACP

2A

6nC

Features

Inner circuit

1) Shorter recovery time

2) Reduced temperature dependence

3) High-speed switching possible

4) High surge current capability

Packaging specifications

Type

Packaging

Tube

Construction

Reel size (mm)

-

Silicon carbide epitaxial planar type

Tape width (mm)

-

Basic ordering unit (pcs)

50

Reverse voltage (repetitive peak)

650

V

Packing code

C9

Marking

SCS302AP

Absolute maximum ratings (T

Parameter

Symbol

Value

Unit

Reverse voltage (DC)

650

V

Continuous forward current

2A

A

Repetitive peak forward current

12

A

Surge non-

repetitive forward

current

19

A

16

A

PW=10

s square, T

70

1.2

A

Total power disspation

22

W

i

1.8

A

Junction temperature

175

°C

Range of storage temperature

55 to 175

°C

(1) Cathode

(2) Cathode

(3) Anode

(1)

(2)

(3)

(3)

(2)

(1)

1/5

2017.07 - Rev.B

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