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BAS316WS 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BAS316WS 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente BAS316WS 0.25A , 100V Surface Mount Small Signal Switching Diode 24-Dec-2014 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High switching speed: max. 4 ns Ultra small plastic SMD package. Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 100 V APPLICATINS High-speed switching in e.g. surface mounted circuits. MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Repetitive peak reverse voltage VRRM 100 V continuous reverse voltage VR 75 V RMS reverse voltage VRMS 53 V Forward Current IF 250 mA Repetitive peak forward current IFRM 500 mA t =1µs 5 t =1 ms 1 Non-repetitive peak forward current t =1 s IFSM 0.5 A Total power dissipation PTOT 200 mW Thermal resistance junction to ambient air RθJA 625 °C/W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Typ. Max. Unit Test Conditions - - 715 IF=1mA - - 855 IF=10mA - - 1000 IF=50mA Forward Voltage VF - - 1250 mV IF=150mA - - 0.03 VR=25V - - 1 VR=75V - - 30 VR=25V, TJ=150°C Reverse Leakage Current IR - - 50 µA VR=75V, TJ=150°C Reverse Recovery Time TRR - - 4 nS when switched from IF=10mA to IR=10 mA, RL = 100 ; measured at IR=1 mA; see Fig.6, Forward recovery voltage VFR - - 1.75 V IF=10mA, tr=20nS Diode Capacitance CD - 2 - pF VR=0, f=1.0MHz Package MPQ Leader Size SOD-323 3K 7 inch Cathode Band G E A J F D H C B 1 2 SOD-323 Z9 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.05 REF. E 0.080 0.180 B 0.20 REF. F 1.15 1.45 C 0.80 1.00 G 1.60 1.80 D 0.25 0.40 H 2.30 2.70 |
类似零件编号 - BAS316WS |
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类似说明 - BAS316WS |
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