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CS10L100CT 数据表(PDF) 2 Page - Chip Integration Technology Corporation |
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CS10L100CT 数据表(HTML) 2 Page - Chip Integration Technology Corporation |
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2 / 3 page ![]() 2 ■ Rating and characteristic curves Reverse Voltage,V (V) R Fig. 2 - Instantaneous Forward Characteristics (per diode) Fig. 3 - Reverse Characteristics (per diode) Instantaneous Forward Voltage,V (Volts) F 10A Low Barrier Diode CS10L100CT Fig.1 - Forward Current Derating Curve (per diode) 0 25 50 75 100 125 150 175 O Case Temperature,T ( C) C 5 4 2 single phase half wave 60Hz resistive or inductive load 3 1 10 20 40 60 80 100 100 10 1 0.1 0.01 O T =25 C A O T =85 C A O T =100 C A O T =150 C A O T =125 C A O T =50 C A 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 T =100°C A T =125°C A T =150°C A T =85°C A T =25°C A Document ID : DS-11K6J Revised Date : 2015/05/26 Revision : C4 |
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