K3010P.. datasheet(2/7 Pages) VISHAY

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K3010P, K3010PG Series

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 01-Jun-12

Document Number: 83504

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Refer to wave profile for soldering conditions for through hole devices (DIP) “Assembly Instructions” (www.vishay.com/doc?80054)

Notes

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

(1) Test voltage must be applied within dV/dt ratings.

(2) IFT is defined as a minimum trigger current.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

Forward current

Forward surge current

≤ 10 μs

IFSM

Power dissipation

Pdiss

100

Junction temperature

100

°C

OUTPUT

Off state output terminal voltage

VDRM

250

On state RMS current

ITRM

100

Peak surge current, non-repetitive

≤ 10 ms

ITMS

1.5

Power dissipation

Pdiss

300

Junction temperature

100

°C

COUPLER

Isolation test voltage (RMS)

t = 1 s

VISO

5300

VRMS

Total power dissipation

Ptot

350

Storage temperature range

Tstg

- 55 to + 150

°C

Ambient temperature range

Tamb

- 55 to + 100

°C

Soldering temperature (1)

2 mm from case, t

≤ 10 s

Tsld

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 50 mA

1.25

1.6

Junction capacitance

VR = 0, f = 1 MHz

OUTPUT

Forward peak off-state voltage

(repetitive)

IRDM = 100 nA

VDRM (1)

250

Peak on-state voltage

ITM = 100 mA

VTM

1.5

Critical rate of rise of off-state voltage

IFT = 0, IFT = 30 mA

dV/dtcr

V/μs

dV/dtcrq

0.1

0.2

V/μs

COUPLER (2)

Collector emitter trigger current

VS = 3 V, RL = 150

K3010P

IFT

815

K3010PG

IFT

815

K3011P

IFT

510

K3011PG

IFT

510

K3012P

IFT

K3012PG

IFT

Holding current

IF = 10 mA, VS

≥ 3 V

100

μA

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