K3020P, K3020PG Series

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Vishay Semiconductors

Rev. 2.4, 30-Aug-16

2

Document Number: 83505

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Notes

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

5V

Forward current

80

mA

Surge current

P.W. < 10 μs

3A

Power dissipation

100

mW

Junction temperature

100

°C

OUTPUT

Peak off-state voltage

400

V

On-state RMS current

100

mA

Peak surge current

1.5

A

Power dissipation

300

mW

Junction temperature

100

°C

COUPLER

Total power dissipation

350

mW

Storage temperature range

-55 to +150

°C

Ambient temperature

-55 to +100

°C

Junction temperature

100

°C

Lead soldering temperature

2 mm from case, t < 10 s

260

°C

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

-1.3

1.6

V

Reverse voltage

5-

-

V

Junction capacitance

-50

-

pF

OUTPUT

Forward peak off-state voltage



(repetitive)

400

-

-

V

Peak on-state voltage

-1.5

3

V

Critical rate of rise of off-state

voltage

-10

-

V/μs

Critical rate of rise of on-state

current commutation

0.1

0.15

-

V/μs

Emitting diode trigger current

K3020P

-15

30

mA

K3020PG

-15

30

mA

K3021P

-8

15

mA

K3021PG

-8

15

mA

K3022P

-5

10

mA

K3022PG

-5

10

mA

K3023P

-3

5

mA

K3023PG

-3

5

mA

Holding current

-

200

-

μA