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ASB Inc.

 sales@asb.co.kr  Tel: +82-42-528-7225

February 2017

ASX520

250 ~ 3000 MHz MMIC Amplifier

Parameters

Units

Typical

Frequency

MHz

900

Gain

dB

31.0

S11

dB

-15

S22

dB

-9

dBm

48

Noise Figure

dB

7.0

Output P1dB

dBm

33

Current

mA

650

Device Voltage

V

+5

1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.

Parameters

Units

Min

Typ

Max

Testing Frequency

MHz

900

Gain

dB

30.0

31.0

S11

dB

-15

S22

dB

-9

Output IP3

dBm

45

48

Noise Figure

dB

7.0

7.3

Output P1dB

dBm

32

33

Current

mA

610

650

690

Device Voltage

V

+5

Parameters

Rating

Operating Case Temperature

-40 to

85 C

Storage Temperature

-40 to

150 C

Device Voltage

+6 V

Operating Junction Temperature

+150

C

Input RF Power (CW, 50

+25 dBm

Thermal Resistance

18

C/W

1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf

Features

Description

Typical Performance

Absolute Maximum Ratings



31 dB Gain at 900 MHz



33 dBm P1dB at 900 MHz



48 dBm Output IP3 at 900 MHz



MTTF > 100 Years



Two Power Supplies

The ASX520, a power amplifier MMIC, has a high

linearity, high gain, and high efficiency over a wide

range of frequency, being suitable for use in both

receiver and transmitter of telecommunication

systems up to 3 GHz. The amplifier is available in

a SOIC package and passes through the stringent

DC, RF, and reliability tests.

Application Circuit



IF (400 ~ 430 MHz)



LTE (700 ~ 800 MHz)



CDMA



GSM



RFID (USA)



Others (1250 ~ 1300 MHz)



Others (950 ~ 1240 MHz)

Product Specifications

Package Style: SOIC8

Pin Configuration

Pin No.

Function

1

2nd stage RF IN

2

1st stage RF OUT

3,5,8

GND

4

1st stage RF IN

6,7

2nd stage RF OUT