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ASB Inc.

 sales@asb.co.kr  Tel: +82-42-528-7225

February 2017

ASX620

150 ~ 3000 MHz MMIC Amplifier

Parameters

Units

Typical

Frequency

MHz

900

Gain

dB

29.5

S11

dB

-15

S22

dB

-8

dBm

48

Noise Figure

dB

6.7

Output P1dB

dBm

33

Current

mA

950

Device Voltage

V

+5

1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.

Parameters

Units

Min

Typ

Max

Testing Frequency

MHz

900

Gain

dB

28.5

29.5

S11

dB

-15

S22

dB

-8

Output IP3

dBm

46

48

Noise Figure

dB

6.7

7.0

Output P1dB

dBm

31

33

Current

mA

900

950

1000

Device Voltage

V

+5

Parameters

Rating

Operating Case Temperature

-40 to

85 C

Storage Temperature

-40 to

150 C

Device Voltage

+6 V

Operating Junction Temperature

+150

C

Input RF Power (CW, 50

+25 dBm

Thermal Resistance

12

C/W

1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf

Features

Description

Typical Performance

Absolute Maximum Ratings



29.5 dB Gain at 900 MHz



33 dBm P1dB at 900 MHz



48 dBm Output IP3 at 900 MHz



MTTF > 100 Years



Two Power Supplies

The ASX620, a power amplifier MMIC, has a high

linearity, high gain, and high efficiency over a wide

range of frequency, being suitable for use in both

receiver and transmitter of telecommunication

systems up to 3 GHz. The amplifier is available in

a SOIC8 package and passes through the strin-

gent DC, RF, and reliability tests.

Application Circuit



DMB (196 ~ 216 MHz)



IF (350 MHz)



CDMA



GSM



RFID (USA)

Product Specifications

ASX620

Package Style: SOIC8

Pin Configuration

Pin No.

Function

1

2nd stage RF IN

2

1st stage RF OUT

3,5,8

GND

4

1st stage RF IN

6,7

2nd stage RF OUT