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2SA554 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA554 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente 2SA554 -2A, -100V P P Epitaxial Planar Transistor 18-Jan-2017 Rev.A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A E C D B K H F G L J 1 2 3 4 1 Base 3 Emitter Collector 24 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Saturation Voltage High Speed Switching MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -2 A Collector Power Dissipation PC 500 mW Thermal Resistance from Junction to Ambient RθJA 250 °C/ W Junction & Storage temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO -100 - - V IC= -0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 - - V IC= -1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -6 - - V IE= -0.1mA, IC=0 Collector Cut-off Current ICBO - - - -1 µA VCB= -100V, IE=0 Emitter Cut-off Current IEBO - - -1 µA VEB= -4V, IC=0 DC Current Gain hFE 120 - 270 VCE= -3V, IC= -100mA - - -0.2 IC= -0.5A, IB= -25mA Collector-Emitter Saturation Voltage VCE(sat) - - -0.3 V IC= -1A, IB= -50mA Transition Frequency fT 30 - - MHz VCE= -5V, IC= -0.1A Output Capacitance COB - 32 - pF VCB= -10V, IE=0, f=1MHz Package MPQ Leader Size SOT-89 1K 7 inch SOT-89 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.30 2.60 K 0.32 0.52 E 1.50 1.70 L 0.35 0.44 F 0.89 1.20 A554 |
类似零件编号 - 2SA554 |
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类似说明 - 2SA554 |
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