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2SC6517 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 2SC6517
功能描述  0.5A , 350V NPN Plastic Encapsulated Transistor
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

2SC6517 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  2SC6517 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2SC6517 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH 2SC6517 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH 2SC6517 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
2SC6517
0.5A , 350V
NPN Plastic Encapsulated Transistor
30-Oct-2015 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Off Characteristics
Collector-Base Breakdown Voltage
V(BR)CBO
350
-
-
V
IC=100µA
Collector-Emitter Breakdown Voltage
V(BR)CEO
350
-
-
V
IC=1mA
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=10µA
Collector Cutoff Current
ICBO
-
-
50
nA
VCB=250V
Emitter Cutoff Current
IEBO
-
-
50
nA
VEB=5V
On Characteristics
20
-
-
VCE=10V, IC=1mA
30
-
-
VCE=10V, IC=10mA
30
-
200
VCE=10V, IC=30mA
20
-
200
VCE=10V, IC=50mA
DC Current Gain
hFE
15
-
-
VCE=10V, IC=100mA
-
-
0.3
IC=10mA, IB=1mA
-
-
0.35
IC=20mA, IB=2mA
-
-
0.5
IC=30mA, IB=3mA
Collector-Emitter Saturation Voltage
1
VCE(sat)
-
-
1
V
IC=50mA, IB=5mA
-
-
0.75
IC=10mA, IB=1mA
-
-
0.85
IC=20mA, IB=2mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
0.9
V
IC=30mA, IB=3mA
Base-Emitter on Voltage
VBE(on)
-
-
2
V
IC=100mA, VCE=10V
Small-Signal Characteristics
Transition Frequency
fT
40
-
200
MHz VCE=20V, IC=10mA, f=20MHz
Collector-Base Capacitance
Ccb
-
6
-
pF
VCB=20V, f=1MHz
Emitter-Base Capacitance
Ceb
-
80
-
pF
VEB=0.5V, f=1MHz
Notes:
1.
Pulse test : Pulse width=300µs, duty cycle=2%.



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