BC846AS datasheet(2/7 Pages) SECOS

2 / 7 page

Elektronische Bauelemente

BC846AS,BS

BC847AS, BS, CS

BC848AS, BS, CS

NPN Plastic Encapsulate Transistor

25-Dec-2014 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

TEST CONDITIONS

BC846

BC847

Collector to Base Breakdown

Voltage

BC848

VCBO

IC = 10µA

BC846

BC847

Collector–Emitter Breakdown

Voltage

BC848

V(BR)CES

IC = 10µA, VEB = 0

BC846

BC847

Collector to Emitter Breakdown

Voltage

BC848

VCEO

IC = 10 mA

BC846

BC847

Emitter to Base Breakdown

Voltage

BC848

VEBO

IE = 1 µA

VCB = 30 V

Collector Cutoff Current

ICBO

µA

VCB = 30 V, TA = 150°C

ON CHARACTERISTICS

0.25

IC = 10mA, IB = 0.5 mA

Collector to Emitter Saturation Voltage

VCE(sat)

0.6

IC = 100mA, IB = 5 mA

0.7

IC = 10mA, IB = 0.5 mA

Base to Emitter Saturation Voltage

VBE(sat)

0.9

IC = 100mA, IB = 5 mA

580

660

700

VCE = 5 V, IC = 2 mA

Base to Emitter Voltage

VBE(on)

770

VCE = 5 V, IC = 10 mA

BC846AS,BC847AS,BC848AS

110

180

220

BC846BS,BC847BS,BC848BS

200

290

450

DC Current

Gain

BC847CS,BC848CS

hFE

420

520

800

VCE = 5V, IC = 2mA

SMALL–SIGNAL CHARACTERISTICS

Transition Frequency

100

MHz

VCE = 5 V, IC = 10 mA, f =

100MHz

Collector Output Capacitance

COb

4.5

VCB = 10 V, f=1MHz

Noise Figure

VCE= 5 V, IC= 0.2 mA,

f= 1KHz, RS= 2K ,

BW= 200Hz

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BC846AS 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

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