MPS751 datasheet(1/2 Pages) SECOS

部件名	MPS751

功能描述	-2A , -80V PNP Plastic Encapsulated Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

MPS751

-2A , -80V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

14-Jun-2016 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

2

Base

1

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Switching and amplifier applications

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise noted)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

-80

V

Collector to Emitter Voltage

VCEO

-60

V

Emitter to Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-2

A

Collector Dissipation

PC

625

mW

Thermal Resistance from Junction to Ambient

R

θJA

200

°C / W

Junction and Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

V(BR)CBO

-80

-

V

IC= -100

µA, IE=0

Collector to Emitter Breakdown Voltage

1

V(BR)CEO

-60

-

V

IC= -10mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

-5

-

V

IE= -10

µA, IC=0

Collector Cut-Off Current

ICBO

-

-0.1

µA VCB= -80V, IE=0

Emitter Cut-Off Current

IEBO

-

-0.1

µA VEB= -4V, IC=0

DC Current Gain

1

hFE

75

-

VCE= -2V, IC= -50mA

75

-

VCE= -2V, IC= -500mA

75

-

VCE= -2V, IC= -1A

40

-

VCE= -2V, IC= -2A

Collector to Emitter Saturation Voltage

1

VCE(sat)

-

-0.5

V

IC= -2A, IB= -200mA

-

-0.3

IC= -1A, IB= -100mA

Base to Emitter Saturation Voltage

1

VBE (sat)

-

-1.2

V

IC= -1A, IB= -100mA

Base to Emitter Voltage

1

VBE(on)

-

-1

V

IC= -1A, VCE= -2V

Transition Frequency

fT

-

75

-

MHz

VCE= -5V, IC= -50mA, f=100MHz

Notes:

1.

Pulse test: pulse width≦300

µs, duty cycle=2.0%.

TO-92

1Emitter

2Base

3Collect

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

4.40

4.70

F

0.30

0.51

B

4.30

4.70

G

1.27 TYP.

C

12.70

14.5

H

1.10

1.40

D

3.30

3.81

J

2.42

2.66

E

0.36

0.56

类似零件编号 - MPS751

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	MPS751	26Kb / 3P	Silicon PNP Transistor
ON Semiconductor	MPS751	103Kb / 6P	Amplifier Transistors May, 2005 ??Rev. 2
KEC(Korea Electronics)	MPS751	370Kb / 3P	EPITAXIAL PLANAR PNP TRANSISTOR
ON Semiconductor	MPS751	74Kb / 5P	Amplifier Transistors April, 2007 ??Rev. 3
Continental Device Indi...	MPS751	197Kb / 3P	NPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS

More results

类似说明 - MPS751

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	2SA733	284Kb / 2P	PNP Plastic Encapsulated Transistor
	2N4402	109Kb / 1P	PNP Plastic Encapsulated Transistor
	2SA733	420Kb / 2P	PNP Plastic Encapsulated Transistor
	2SD1767	77Kb / 1P	0.7A , 80V NPN Plastic Encapsulated Transistor
	KSA928ATL	242Kb / 2P	-2A , -30V PNP Plastic Encapsulated Transistor
	MMBTA56	73Kb / 1P	-0.5A , -80V PNP Plastic Encapsulated Transistor
	MPSA56	67Kb / 1P	-0.5A , -80V PNP Plastic Encapsulated Transistor
	2SD2061	359Kb / 2P	3A, 80V P Plastic-Encapsulated Transistor
	2SD2396	385Kb / 2P	3A, 80V P Plastic-Encapsulated Transistor
	MPS750	67Kb / 1P	-2A , -60V PNP Plastic Encapsulated Transistor