Elektronische Bauelemente

SSD55P30J

P-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev.B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

-55

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

µA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

1

Gate-Threshold Voltage

-2

-

-4

V

Static Drain-Source On-Resistance

-

-

40

m

Forward Transconductance

8

-

-

S

Dynamic Characteristics

Input Capacitance

-

3500

-

Output Capacitance

-

240

-

Reverse Transfer Capacitance

-

153

-

pF

f=1MHz

Switching Characteristics

Total Gate Charge

-

56

-

Gate-Source Charge

-

11

-

Gate-Drain Charge

-

24

-

nC

Turn-on Delay Time

-

12

-

Rise Time

-

15

-

Turn-off Delay Time

-

38

-

Fall Time

-

15

-

nS

Drain-Source Diode Characteristics

Diode Forward Voltage

1

-

-

-1.2

V

Continuous Drain-Source Diode

Forward Current

-

-

-30

A

Pulsed Drain-Source Diode

Forward Current

-

-

-120

A

Notes:

1.

Pulse test：Pulse width≦300µs, duty cycle≦2%.