Elektronische Bauelemente

SSG05N10J

Dual-N Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

100

-

-

V

Drain-Source Leakage Current

-

-

1

µA

Gate-Source Leakage Current

-

-

±100

nA

Gate-Threshold Voltage

3

1

-

2

V

Static Drain-Source On-Resistance

3

-

-

140

m

Forward Transconductance

3

-

8

-

S

Diode Forward Voltage

3

-

-

1.2

V

Dynamic Characteristics

4

Input Capacitance

-

690

-

Output Capacitance

-

120

-

Reverse Transfer Capacitance

-

90

-

pF

f=1MHz

Switching Characteristics

4

Turn-on Delay Time

-

11

-

Rise Time

-

7.4

-

Turn-off Delay Time

-

35

-

Fall Time

-

9.1

-

nS

Total Gate Charge

-

15.5

-

Gate-Source Charge

-

3.2

-

Gate-Drain (“Miller”) Change

-

4.7

-

nC

Notes:

1.

Repetitive rating : Pulse width limited by the junction temperature.

2.

Surface mounted on FR4 board, t

10s.

≦

3.

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

4.

Guaranteed by design, not subject to production.