Elektronische Bauelemente

SSG60P05J

Ω

Ω

Ω

P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SSG60P05J uses advanced trench technology and design

used in a wide variety of applications.

FEATURES

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

APPLICATIONS

Power switching application

Hard switched and high frequency circuits

DC-DC converter

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

4K

13 inch

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-5

A

Pulsed Drain Current

1

-25

A

Thermal Resistance from Junction to Ambient

2

100

°C / W

Lead Temperature for Soldering Purposes@1/8’’ from

case for 10s

260

°C

Operating Junction and Storage Temperature Range

150, -55~150

°C

Q60P05

= Date Code

S

S

S

G

D

D

D

D

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.33

0.51

B

4.700

5.10

J

0.375 REF.

C

3.80

4.00

K

45°REF.

D

0°

8°

L

1.35

1.75

E

0.40

1.27

M

0.10

0.25

F

0.17

0.25

N

0.25 REF.

G

1.27 TYP.

SOP-8