IRFE430 datasheet(8/8 Pages) IRF

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IRFE430, JANTX-, JANTXV-, 2N6802U Device

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Data and specifications subject to change without notice.

12/97

Repetitive Rating; Pulse width limited by

maximum junction temperature.

Refer to current HEXFET reliability report.

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

ISD ≤ 2.5A, di/dt ≤ 86 A/µs,

VDD ≤ BVDSS, TJ ≤ 150°C

Suggested RG = 2.35Ω

@ VDD = 50 V, Starting TJ = 25°C,

EAS = [0.5 * L * (IL

2) ]

Peak IL = 2.5A, VGS =10 V, 25 ≤ RG ≤ 200Ω

K/W = °C/W

Notes:

Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package

IR Case Style Leadless Chip Carrier (LCC)

IRFE430 数据表(PDF) 8 Page - International Rectifier