© 2001 IXYS All rights reserved

7 - 8

MUBW 10-12 A7

Fig. 13 Typ. turn on energy and switching

Fig. 14 Typ. turn off energy and switching

times versus collector current

times versus collector current

Fig. 15 Typ. turn on energy and switching

Fig.16 Typ. turn off energy and switching

times versus gate resistor

times versus gate resistor

Fig. 17 Reverse biased safe operating area

Fig. 18 Typ. transient thermal impedance

RBSOA

0

5

10

15

20

0

1

2

3

4

0

20

40

60

80

0

5

10

15

20

0

1

2

3

4

0

100

200

300

400

0.00001 0.0001 0.001

0.01

0.1

1

10

0.0001

0.001

0.01

0.1

1

10

0

20

406080

100

120

140

0.0

0.4

0.8

1.2

0

200

400

600

0

204060

80

100

120

140

0.0

0.5

1.0

1.5

2.0

0

25

50

75

100

single pulse

V

V

R

T

MUBW1012A7

V

V

I

C

= 10A

T

0

200

400

600

800

1000 1200 1400

0

5

10

15

20

25

R

T

V

V

R

T

E

on

V

V

I

C

= 10A

T

J

d(on)

J

r

E

off

J

d(off)

J

f

E

on

J

d(on)

J

r

E

off

J

d(off)

J

f

I

C

A

I

C

A

E

off

E

on

t

t

R

G

Ω

R

G

Ω

V

CE

t

s

mJ

E

on

mJ

E

off

ns

t

ns

t

I

CM

K/W

Z

thJC

IGBT

diode

V

A

mJ

ns

ns

mJ

Output Inverter T1 - T6 / D1 - D6