Elektronische Bauelemente

SSG7328J

Ω

Ω

Ω

Dual-P Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Drain-Source Breakdown Voltage

-30

-

-

V

Gate Threshold Voltage

-1

-

-2.5

V

Forward Transconductance

12

-

-

S

Gate-Source Leakage Current

-

-

±100

nA

Zero Gate Voltage Drain Current

-

-

-15

µA

-

-

21

Static Drain-Source On-Resistance

3

-

-

32

m

Dynamic Characteristics

4

Total Gate Charge

-

78

-

Gate-Source Chagre

-

9.8

-

Gate-Drain (“Miller”) Change

-

8.3

-

nC

Turn-on Delay Time

-

20

-

Rise Time

-

23

-

Turn-off Delay Time

-

297

-

Fall Time

-

147

-

nS

Input Capacitance

-

2675

-

Output Capacitance

-

409

-

Reverse Transfer Capacitance

-

262

-

pF

f=1.0MHz

Source-Drain Diode

Diode Forward Voltage

3

-

-

-1.2

V

Notes：

1.

Repetitive rating: Pulse width limited by junction temperature.

2.

Surface mounted on 1’’×1’’ FR4 board, t

10s

≦

3.

Pulse Test: Pulse width

300 µs,

≦

Duty cycle

2

≦ %

4.

Guaranteed by design, not subject to production testing.