Elektronische Bauelemente

SSG9971A

Ω

Ω

Ω

Dual-N Enhancement Mode Power MOSFET

02-Jun-2017 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static

Drain-Source Breakdown Voltage

60

-

-

V

Breakdown Voltage Temp. Coefficient

BV

△

T

-

0.063

-

V/°C

Gate-Threshold Voltage

1

-

2.5

V

Forward Transfer Conductance

-

20

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

µA

-

-

36

Drain-Source On-Resistance

4

-

-

45

m

Total Gate Charge

-

12.56

-

Gate-Source Charge

-

3.24

-

Gate-Drain Charge

-

6.31

-

nC

Turn-On Delay Time

-

8

-

Rise Time

-

14.2

-

Turn-Off Delay Time

-

24.4

-

Fall Time

-

4.6

-

nS

Input Capacitance

-

1345

-

Output Capacitance

-

72.5

-

Reverse Transfer Capacitance

-

54.4

-

pF

f=1.0MHz

Source-Drain Diode

Continuous Source Current

1

-

5

-

A

Pulsed Source Current

3

-

14

-

A

Forward On Voltage

4

-

-

1.2

V

Notes:

1.

Surface mounted on a 1 inch

2.

when mounted on Min. copper pad.

3.

The power dissipation is limited by 150°C junct ion temperature

4.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%