Elektronische Bauelemente

SSM1K2 20

Ω

Ω

Ω

-Channel Enhancement Mode Power MOSFET

22-Dec-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

200

-

-

V

Gate Threshold Voltage

1

-

3

V

Forward Transfer conductance

gfs

-

2.8

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

uA

-

-

1.2

Static Drain-Source On-Resistance

3

-

-

1.7

Total Gate Charge

-

8.5

-

Gate-Source Charge

-

1.1

-

Gate-Drain (“Miller”) Charge

-

2.1

-

nC

Turn-On Delay Time

-

4

-

Rise Time

-

6

-

Turn-Off Delay Time

-

16

-

Fall Time

-

6.5

-

Ns

Input Capacitance

-

225

-

Output Capacitance

-

50

-

Reverse Transfer Capacitance

-

15

-

pF

f=1MHz

Source-Drain Diode

Continuous Source Current

1

-

-

1

Pulsed Source Current

2

-

-

4

A

Forward On Voltage

3

-

-

1.2

V

Reverse Recovery Time

trr

-

90

-

nS

Reverse Recovery Charge

Qrr

-

280

-

nC

Notes:

1.

Surface mounted on a 1 inch

2.

The power dissipation is limited by 150°C junction temperature.

3.

Pulse test : Pulse width ≦ 300us, Duty cycle ≦ 2%.