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STESD03C 数据表(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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STESD03C 数据表(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 3 page ![]() Elektronische Bauelemente STESD03C 70W, 3.3V Low Capacitance ESD Protection (Bi-directional) 07-Feb-2017 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3 VRWM - - 3.3 V Reverse Breakdown Voltage VBR 4 - 6 V IT=1mA Reverse Leakage Current IR - - 0.4 µA VRWM=3.3V Clamping Voltage 2 VC - - 10 V IPP=7A Junction Capacitance CJ - - 15 pF VR=0V, f=1MHz Notes : 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. 3. Other voltages available upon request. RATINGS AND CHARACTERISTICS CURVES |
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