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2SA1952 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1952 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1952 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC = −50µA; IE= 0 -100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -60 V V(BR)EBO Emitter-base breakdown voltage IE = −50µA; IC= 0 -5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A -1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE-1 DC Current Gain IC= -1A ; VCE= -2V 120 270 fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -4V 80 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 130 pF |
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