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2SB1113 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1113 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Darlingtion Power Transistor 2SB1113 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -30mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -2.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -3V 1000 hFE-2 DC Current Gain IC= -4A; VCE= -3V 1000 15000 Switching Times ton Turn-on Time IC= -4A ,IB1= -IB2= -16mA, VCC≈ -45V; RL= 15Ω 0.8 μ s tstg Storage Time 2.0 μ s tf Fall Time 2.5 μ s |
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