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BCP080C 数据表(PDF) 1 Page - BeRex Corporation |
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BCP080C 数据表(HTML) 1 Page - BeRex Corporation |
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1 / 4 page  www.berex.com BeRex, Inc. 3350 Scott Blvd. #6101 Santa Clara 95054 tel. (408) 452-5595 February 2017 Specifications are subject to change without notice. ©BeRex 2017 Rev. 1.1 BCP080C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm) The BeRex BCP080C is a GaAs Power pHEMT with a nominal 0.25-micron by 800-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP080C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability . PRODUCT FEATURES • 28.5 dBm Typical Output Power • 11 dB Typical Gain @ 12 GHz • 0.25 X 800 Micron Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 120mA) 12 GHZ 18 GHz 27.0 25.0 28.5 26.5 dBm G1dB Gain @ P1dB (Vds = 8V, Id = 120mA) 12 GHZ 18 GHz 9.5 7.0 11.0 8.5 dB PAE PAE @ P1dB (Vds = 8V, Id = 120mA) 12 GHZ 18 GHz 60 45 % Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 165 245 325 mA Gm Transconductance (Vds = 2V, Id = 120mA) 310 mS Vp Pinch-off Voltage (Ids = 0.8mA, Vds = 2V) -2.5 -1.2 V BVgd Drain Breakdown Voltage (Igd = 0.8mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 0.8mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 57 °C/W |
类似零件编号 - BCP080C |
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类似说明 - BCP080C |
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