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BCP080T 数据表(PDF) 1 Page - BeRex Corporation |
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BCP080T 数据表(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  BCP080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm) The BeRex BCP080T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 800 micron gate width making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCP080T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES • 30 dBm Typical Output Power • 10.5 dB Typical Gain @ 12 GHz • 60% PAE Typical @12 GHz • 0.25 X 800 µm Recessed Gate • Also available in 70 mil. ceramic package (BCP080T-70) APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement DC CHARACTERISTICS Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS MIN. TYPICAL MAX. UNIT Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 160 240 320 mA Gm Transconductance (Vds = 3V, Vgs = 50% Idss) 320 mS Vp Pinch-off Voltage (Ids = 800 µA, Vds = 2V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Igd = 0.8 mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 0.8 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 61 °C/W ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 29.0 30.0 30.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 9.5 10.5 7.5 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 60 55 % www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 January 2015 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 |
类似零件编号 - BCP080T |
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类似说明 - BCP080T |
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