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DF06M 数据表(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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DF06M 数据表(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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1 / 2 page ![]() Case: DIP, Molded Plastic DF005M - DF10M DF005M – DF10M Low Forward Voltage Drop High Surge Current Capability Glass Passivated Die Construction Classification 94V-O MIL-STD-202, Method 208 Designed for Surface Mount Application 1.0A PASSIVATED BRIDGE RECTIFIER Features High Current Capability Plastic Material – UL Recognition Flammability Mechanical Data Terminals: Plated Leads Solderable per Polarity: As Marked on Case Weight: 1.0 grams (approx.) Mounting Position: Any Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @TA = 40°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward Voltage per element @IF = 1.0A VFM 1.1 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 5.0 500 µA Typical Junction Capacitance per element (Note 1) Cj 25 pF Typical Thermal Resistance per leg (Note 2) RθJA RθJL 40 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm 2 copper pad. 1 of 2 D E H J K L M B A C G DIP Dim Min Max A 6.20 6.50 B 6.80 8.40 C 7.24 8.70 D 0.20 0.38 E G H 1.30 J 3.80 4.90 K L M All Dimensions in mm 0.90 1.40 5.00 5.20 0.45 0.58 8.12 8.80 2.15 3.40 - ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DF01M DF005M DF02M DF04M DF06M DF08M DF10M Alldatasheet |
类似零件编号 - DF06M |
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类似说明 - DF06M |
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