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REF2125IDBVR 数据表(PDF) 15 Page - Texas Instruments |
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REF2125IDBVR 数据表(HTML) 15 Page - Texas Instruments |
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15 / 24 page ![]() J A D JA T T P R T u REF(MAX) REF(MIN) 6 REF V V Drift = 10 V Temperature Range · § u ¸ ¨ u © ¹ Bandgap core Buffer Digital Enable Blocks Clean EN IN CS GND OUT Start Vdd Copyright © 2017, Texas Instruments Incorporated 15 REF2125 www.ti.com SBAS798 – SEPTEMBER 2017 Product Folder Links: REF2125 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 8 Detailed Description 8.1 Overview The REF2125 is part of a family of low-noise, precision bandgap voltage references that are specifically designed for excellent initial voltage accuracy and drift. The Functional Block Diagram is a simplified block diagram of the REF2125 showing basic band-gap topology. 8.2 Functional Block Diagram 8.3 Feature Description 8.3.1 Supply Voltage The REF2125 family of references features an extremely low dropout voltage. The REF2125 can be operated with a supply of only 1 mV above the output voltage in an unloaded condition. For loaded conditions, a typical dropout voltage versus load is shown on the front page. The REF2125 features a low quiescent current that is extremely stable over changes in both temperature and supply. The typical room temperature quiescent current is 72 μA, and the maximum quiescent current over temperature is just 95 μA. Supply voltages below the specified levels can cause the REF2125 to momentarily draw currents greater than the typical quiescent current. Use a power supply with a fast rising edge and low output impedance to easily prevent this issue. 8.3.2 Low Temperature Drift The REF2125 is designed for minimal drift error, which is defined as the change in output voltage over temperature. The drift is calculated using the box method, as described by Equation 3: (3) 8.3.3 Load Current The REF2125 family is specified to deliver a current load of ±10 mA per output. The VREF output of the device are protected from short circuits by limiting the output short-circuit current to 18 mA. The device temperature increases according to Equation 4: where • TJ = junction temperature (°C), • TA = ambient temperature (°C), • PD = power dissipated (W), and • RθJA = junction-to-ambient thermal resistance (°C/W) (4) The REF2125 maximum junction temperature must not exceed the absolute maximum rating of 150°C. |
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