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IRKT26/04AS90 数据表(PDF) 3 Page - International Rectifier

部件名 IRKT26/04AS90
功能描述  ADD-A-pakTM GEN V Power Modules
PDF  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRKT26/04AS90 数据表(HTML) 3 Page - International Rectifier

  IRKT26/04AS90 Datasheet HTML 1Page - International Rectifier IRKT26/04AS90 Datasheet HTML 2Page - International Rectifier IRKT26/04AS90 Datasheet HTML 3Page - International Rectifier IRKT26/04AS90 Datasheet HTML 4Page - International Rectifier IRKT26/04AS90 Datasheet HTML 5Page - International Rectifier IRKT26/04AS90 Datasheet HTML 6Page - International Rectifier IRKT26/04AS90 Datasheet HTML 7Page - International Rectifier IRKT26/04AS90 Datasheet HTML 8Page - International Rectifier  
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IRK.26 Series
3
Bulletin I27130 rev. G 10/02
www.irf.com
T
J
Junction operating
temperature range
T
stg
Storage temp. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.31
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
3
wt
Approximate weight
110 (4)
gr (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRK.26
Units
Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/
µs, to complete code add S90 i.e. IRKT26/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
15
mA
T
J
= 125oC, gate open circuit
at VRRM, VDRM
V
INS
RMS isolation voltage
2500 (1 min)
V
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
500
V/
µsT
J
= 125oC, linear to 0.67 V
DRM
,
Triggering
Blocking
P
GM
Max. peak gate power
10
P
G(AV)
Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GM
Max. peak negative
gate voltage
4.0
TJ = - 40°C
2.5
TJ = 25°C
1.7
TJ = 125°C
270
TJ = - 40°C
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
0.25
V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125oC,
rated V
DRM
applied
T
J
= 125oC,
rated V
DRM
applied
Parameters
IRK. 26
Units
Conditions
Parameters
IRK. 26
Units
Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
Sine half wave conduction
Rect. wave conduction
Devices
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
IRK.26
0.23
0.27
0.34
0.48
0.73
0.17
0.28
0.36
0.49
0.73
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)



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