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LF355 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LF355
功能描述  JFET Input Operational Amplifiers
PDF  23 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LF355 数据表(HTML) 3 Page - National Semiconductor (TI)

  LF355 Datasheet HTML 1Page - National Semiconductor (TI) LF355 Datasheet HTML 2Page - National Semiconductor (TI) LF355 Datasheet HTML 3Page - National Semiconductor (TI) LF355 Datasheet HTML 4Page - National Semiconductor (TI) LF355 Datasheet HTML 5Page - National Semiconductor (TI) LF355 Datasheet HTML 6Page - National Semiconductor (TI) LF355 Datasheet HTML 7Page - National Semiconductor (TI) LF355 Datasheet HTML 8Page - National Semiconductor (TI) LF355 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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DC Electrical Characteristics (Continued)
(Note 3)
Symbol
Parameter
Conditions
LF155/6
LF256/7
LF356B
LF355/6/7
Units
Min
Typ
Max Min
Typ
Max Min
Typ
Max
I
B
Input Bias Current
T
J=25˚C, (Notes 3, 5)
30
100
30
100
30
200
pA
T
J≤THIGH
50
5
8
nA
R
IN
Input Resistance
T
J=25˚C
10
12
10
12
10
12
Ω
A
VOL
Large Signal Voltage
Gain
V
S= ±15V, TA=25˚C
50
200
50
200
25
200
V/mV
V
O= ±10V, RL=2k
Over Temperature
25
25
15
V/mV
V
O
Output Voltage Swing
V
S= ±15V, RL=10k
±12
±13
±12
±13
±12
±13
V
V
S= ±15V, RL=2k
±10
±12
±10
±12
±10
±12
V
V
CM
Input Common-Mode
Voltage Range
V
S= ±15V
±11
+15.1
±11
±15.1
+10
+15.1
V
−12
−12
−12
V
CMRR
Common-Mode
Rejection Ratio
85
100
85
100
80
100
dB
PSRR
Supply Voltage
Rejection Ratio
(Note 6)
85
100
85
100
80
100
dB
DC Electrical Characteristics
T
A =TJ = 25˚C, VS = ±15V
Parameter
LF155
LF355
LF156/256/257/356B
LF356
LF357
Units
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Supply
Current
2424
5
7
5
10
5
10
mA
AC Electrical Characteristics
T
A =TJ = 25˚C, VS = ±15V
Symbol
Parameter
Conditions
LF155/355
LF156/256/
356B
LF156/256/356/
LF356B
LF257/357
Units
Typ
Min
Typ
Typ
SR
Slew Rate
LF155/6:
A
V=1,
5
7.5
12
V/µs
LF357: A
V=5
50
V/µs
GBW
Gain Bandwidth Product
2.5
5
20
MHz
t
s
Settling Time to 0.01%
(Note 7)
4
1.5
1.5
µs
e
n
Equivalent Input Noise
Voltage
R
S=100Ω
f=100 Hz
25
15
15
f=1000 Hz
20
12
12
i
n
Equivalent Input Current
Noise
f=100 Hz
0.01
0.01
0.01
f=1000 Hz
0.01
0.01
0.01
C
IN
Input Capacitance
3
3
3
pF
Notes for Electrical Characteristics
Note 1: The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum available power dissipation at any temperature is PD=(TJMAX−TA)/θJA or the 25˚C PdMAX, whichever is less.
Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 3: Unless otherwise stated, these test conditions apply:
www.national.com
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