EC736014

60V 、

、

、

、60A N-Channel

Page 2 of 6

6B18N-Rev.F001

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Drain-to-Source breakdown voltage

60

—

—

V

Static Drain-to-Source on-resistance

—

12

14

m

Gate threshold voltage

2.0

4.0

V

gfs

Forward transconductance

—

60

—

S

—

—

2

µA

Drain-to-Source leakage current

—

—

10

µA

Gate-to-Source forward leakage

—

—

100

nA

Gate-to-Source reverse leakage

—

—

-100

nA

Qg

Total gate charge

—

45

—

Qgs

Gate-to-Source charge

—

4

—

Qgd

Gate-to-Drain("Miller") charge

—

15

—

nC

Turn-on delay time

—

14.6

—

tr

Rise time

—

14.2

—

Turn-Off delay time

—

40

—

tf

Fall time

—

7.3

—

nS

Ciss

Input capacitance

—

1480

—

Coss

Output capacitance

—

190

—

Crss

Reverse transfer capacitance

—

135

—

pF

f=1.0MHZ

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

—

—

60

Pulsed Source Current

(Body Diode)

①

—

—

240

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Diode Forward Voltage

—

—

1.3

V

trr

Reverse Recovery Time

—

33

—

nS

Qrr

Reverse Recovery Charge

—

61

—

nC

di/dt=100A/µs

③

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

②

Test condition: L =0.3mH, VDD = 30V,Id=37A

③

Pulse width≤300µS, duty cycle≤1.5% ; RG = 25  Starting TJ = 25°C