EC736014D datasheet(1/7 Pages) E-CMOS

部件名	EC736014D

功能描述	60V ,60A N-Channel

PDF	7 Pages

Scroll/Zoom	100%

制造商	E-CMOS [E-CMOS Corporation]

网页	http://www.ecmos.com.tw/

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1 / 7 page

EC736014D

60V 、

、

、60A N-Channel

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 7

5A21N-Rev.F001

VDSS

60V

RDS(on)

12m

(typ.)

ID

60A

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive

avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power

switching application and a wide variety of other applications.

Features and Benefits:

Advanced MOSFET process technology

Special designed for PWM, load switching and

general purpose applications

Ultra low on-resistance with low gate charge

Fast switching and reverse body recovery

175℃ operating temperature

Main Product Characteristics

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, V GS @ 10V①

60

ID @ TC = 100°C

Continuous Drain Current, V GS @ 10V ①

42

IDM

Pulsed Drain Current

240

A

Power Dissipation

115

W

PD @TC = 25°C

Linear Derating Factor

0.74

W/°C

VDS

Drain-Source Voltage

60

V

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy @ L=0.3mH

235

mJ

IAS

Avalanche Current @ L=0.3mH

39

A

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

类似零件编号 - EC736014D

制造商	部件名	数据表	功能描述
E-CMOS Corporation	EC736014	487Kb / 6P	60V 60A N-Channel
	EC736014AT	487Kb / 6P	60V 60A N-Channel
	EC736014J7	170Kb / 4P	60V ,40A N-Channel
	EC736014J7F2R	170Kb / 4P	60V ,40A N-Channel

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