5KP datasheet(2/5 Pages) E-CMOS

2 / 5 page

Breakdown Voltage: 6.8 to 440 V

Peak Pulse Power: 5000 W

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 5

4F20N-Rev. F001

5KP Series

Maximum Ratings(TA=25℃

℃

℃ unless otherwise noted)

Note：

(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1

(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

Ratings and Characteristics Curves (TA=25℃

℃

℃ unless otherwise noted)

Parameter

Symbol

Value

UNIT

Peak power dissipation with a 10/1000µs waveform(1)

PPP

5000

Peak pulse current wih a 10/1000µs waveform(1)

IPP

See Next Table

Power dissipation on infinite heatsink at TL = 75 °C

8.0

Peak forward surge current, 8.3 ms single half sine-

wave unidirectional only

(2)

IFSM

500

Maximum instantaneous forward voltage at 100 A for

(3)

unidirectional only

3.5/5.0

Operating junction and storage temperature range

TJ, TSTG

–55 to +150

°C

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