2SC5183 datasheet(1/21 Pages) NEC

部件名	2SC5183

功能描述	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

PDF	21 Pages

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制造商	NEC [NEC]

网页	http://www.nec.com/

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PLEASE

NOTE:

PLEASE

NOTE:

PLEASE

NOTE:

PLEASE

NOTE:

PLEASE

NOTE:

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

The

following

part

numbers

from

this

datasheet

are

not

from

this

datasheet

are

not

from

this

datasheet

are

not

from

this

datasheet

are

not

from

this

datasheet

are

not

recommended

for

new

design.

recommended

for

new

design.

recommended

for

new

design.

recommended

for

new

design.

recommended

for

new

design.

Please

call

sales

office

for

Please

call

sales

office

for

Please

call

sales

office

for

Please

call

sales

office

for

Please

call

sales

office

for

details:

NE68730

NE68733

NE68739

NE68739R

PART NUMBER1

NE68718

NE68719

NE68730

NE68733

NE68739/39R

EIAJ2 REGISTERED NUMBER

2SC5185

2SC5186

2SC5184

2SC5182

2SC5183/83R

PACKAGE OUTLINE

18

19

30

33

39/39R

SYMBOLS

PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

fT

Gain Bandwidth Product at

VCE = 2 V, IC = 20 mA, f = 2.0 GHz

GHz

10

13

9

11

9

11

9

12

7.5

10

fT

Gain Bandwidth Product at

VCE = 1 V, IC = 10 mA, f = 2.0 GHz

GHz

8

11

7

9

7

9

7

10

7

8.5

NFMIN

Minimum Noise Figure at

VCE = 2 V, IC = 3 mA, f = 2.0 GHz

dB

1.3

2.0

1.3

2.0

1.3

2.0

1.3

2.0

1.3

2.0

NFMIN

Minimum Noise Figure at

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

dB

1.3

2.0

1.3

2.0

1.3

2.0

1.3

2.0

1.3

2.0

|S21e|2

Insertion Power Gain at

VCE = 2V, IC =20 mA, f = 2.0 GHz

dB

8

11

8.5

10

7

8.5

7

8.5

7.5

10

|S21e|2

Insertion Power Gain at

VCE = 1V, IC =10 mA, f = 2.0 GHz

dB

7.5

9

6

7.5

6

7.5

6

7.5

7

8.5

hFE

Forward Current Gain3 at

VCE = 2 V, IC = 20 mA

70

140

70

140

70

140

70

140

70

140

ICBO

Collector Cutoff Current

at VCB = 5 V, IE = 0 mA

nA

100

IEBO

Emitter Cutoff Current

at VEB = 1 V, IC = 0 mA

nA

100

CRE4

Feedback Capacitance at

VCB = 2 V, IE = 0 mA, f = 1 MHz

pF

0.3

0.6

0.4

0.8

0.4

0.8

0.4

0.8

0.4

0.8

PT

Total Power Dissipation

mW

90

RTH(J-A)

Thermal Resistance

(Junction to Ambient)

°C/W

833

1250

833

625

RTH(J-C)

Thermal Resistance

(Junction to Case)

°C/W

SURFACE MOUNT NPN SILICON

HIGH FREQUENCY TRANSISTOR

NE687

SERIES

FEATURES

30 (SOT 323 STYLE)

18 (SOT 343 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

39R (SOT 143R STYLE)

DESCRIPTION

The NE687 series of NPN epitaxial silicon transistors are

designed for low cost, low noise applications. Excellent perfor-

mance at low voltage/low current makes this series an ideal

choice for portable wireless applications at 1.6, 1.9 and 2.4

GHz. The NE687 die is available in six different low cost plastic

surface mount package styles.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

• LOW NOISE: 1.3 dB AT 2.0 GHz

• LOW VOLTAGE OPERATION

• EASY TO MATCH

• HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

Notes:

1. Precaution: Devices are ESD sensitive. Use proper handling procedures.

2. Electronic Industrial Association of Japan.

California Eastern Laboratories

3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.

4. The emitter terminal should be connected to the ground terminal

of the 3 terminal capacitance bridge.

类似零件编号 - 2SC5183

制造商	部件名	数据表	功能描述
NEC	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
Renesas Technology Corp	2SC5183	190Kb / 14P	SILICON TRANSISTOR 1994
NEC	2SC5183-T1	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC	2SC5183-T2	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
Renesas Technology Corp	2SC5183R	210Kb / 10P	SILICON TRANSISTOR 1995

More results

类似说明 - 2SC5183

制造商	部件名	数据表	功能描述
Motorola, Inc	MRF5583	67Kb / 4P	SURFACE MOUNT HIGH-FREQUENCY TRANSISTOR PNP SILICON
NEC	NE686	140Kb / 11P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
	NE685	176Kb / 17P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
	NE688	231Kb / 19P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE685	354Kb / 18P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
	NE686	258Kb / 12P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
	NE687	314Kb / 22P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
	NE688	347Kb / 20P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Central Semiconductor C...	CXT5551HC	289Kb / 2P	SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR
Central Semiconductor C...	CZT853	535Kb / 2P	SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR