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EC2621 数据表(PDF) 3 Page - E-CMOS Corporation |
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EC2621 数据表(HTML) 3 Page - E-CMOS Corporation |
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3 / 7 page ![]() EC2621 Micropower CMOS Output Hall Effect Switch E-CMOS Corp. (www.ecmos.com.tw)) Page 3 of 7 5F08N-Rev. F006 Block Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. Absolute Maximum Ratings At TA=25℃ Characteristics Values Unit Supply voltage,(VDD) 4.5 V Output Voltage,(VOUT) 4.5 V Reverse Voltage , (VDD) (VOUT) -0.3 V Magnetic flux density Unlimited Gauss Output current,(IOUT) 1 mA Operating temperature range, (TA) -40 to +85 ℃ Storage temperature range, (TS) -65 to +150 ℃ Maximum Junction Temp,(TJ) 150 ℃ Supply voltage,(VDD) 4.5 V Output Voltage,(VOUT) 4.5 V Thermal Resistance(θJA) TSOT23-3L 310 ℃/W SOT553 540 ℃/W QFN2x2-3L 206 ℃/W TO92-3L 543 ℃/W Thermal Resistance(θJC) TSOT23-3L 223 ℃/W SOT553 390 ℃/W QFN2x2-3L 148 ℃/W TO92-3L 410 ℃/W Package Power Dissipation, (PD) TSOT23-3L 400 mW SOT223 230 mW QFN2x2-3L 606 mW TO92-3L 230 mW Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. Out Awake/Sleep Timing Control VDD Offset Cancellation Amp Control Logic GND |
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