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EC2621 数据表(PDF) 3 Page - E-CMOS Corporation

部件名 EC2621
功能描述  Micropower CMOS Output Hall Effect Switch
PDF  7 Pages
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制造商  E-CMOS [E-CMOS Corporation]
网页  http://www.ecmos.com.tw/
标志 E-CMOS - E-CMOS Corporation

EC2621 数据表(HTML) 3 Page - E-CMOS Corporation

  EC2621 Datasheet HTML 1Page - E-CMOS Corporation EC2621 Datasheet HTML 2Page - E-CMOS Corporation EC2621 Datasheet HTML 3Page - E-CMOS Corporation EC2621 Datasheet HTML 4Page - E-CMOS Corporation EC2621 Datasheet HTML 5Page - E-CMOS Corporation EC2621 Datasheet HTML 6Page - E-CMOS Corporation EC2621 Datasheet HTML 7Page - E-CMOS Corporation  
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EC2621
Micropower CMOS Output Hall Effect Switch
E-CMOS Corp. (www.ecmos.com.tw))
Page 3 of 7
5F08N-Rev. F006
Block Diagram
Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage
protection, a 100Ω resistor in series with VDD is recommended.
Absolute Maximum Ratings At TA=25℃
Characteristics
Values
Unit
Supply voltage,(VDD)
4.5
V
Output Voltage,(VOUT)
4.5
V
Reverse Voltage , (VDD) (VOUT)
-0.3
V
Magnetic flux density
Unlimited
Gauss
Output current,(IOUT)
1
mA
Operating temperature range, (TA)
-40 to +85
Storage temperature range, (TS)
-65 to +150
Maximum Junction Temp,(TJ)
150
Supply voltage,(VDD)
4.5
V
Output Voltage,(VOUT)
4.5
V
Thermal
Resistance(θJA)
TSOT23-3L
310
℃/W
SOT553
540
℃/W
QFN2x2-3L
206
℃/W
TO92-3L
543
℃/W
Thermal Resistance(θJC)
TSOT23-3L
223
℃/W
SOT553
390
℃/W
QFN2x2-3L
148
℃/W
TO92-3L
410
℃/W
Package Power Dissipation, (PD)
TSOT23-3L
400
mW
SOT223
230
mW
QFN2x2-3L
606
mW
TO92-3L
230
mW
Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-rated
conditions for extended periods may affect device reliability.
Out
Awake/Sleep
Timing Control
VDD
Offset
Cancellation
Amp
Control
Logic
GND



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