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2SD1114 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1114 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1114 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V V(BR)CBO Collector - Base Breakdown Voltage IC= 0.1mA; IE= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 60mA 2.0 V ICEO Collector Cutoff Current VCB= 400V; Rbe = ∞ 0.1 mA hFE DC Current Gain IC= 4A; VCE= 2V 500 Switching Times ton Turn-On Time IC= 6A; IB1= IB2= 60mA; 2.0 μ s Toff Turn-On Time 23 μ s Download from alldatasheet.com |
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