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DB101S 数据表(PDF) 1 Page - Chip Integration Technology Corporation

部件名 DB101S
功能描述  1A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers
PDF  3 Pages
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制造商  CITC [Chip Integration Technology Corporation]
网页  http://www.citcorp.com.tw/english/index.php
标志 CITC - Chip Integration Technology Corporation

DB101S 数据表(HTML) 1 Page - Chip Integration Technology Corporation

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1
Dimensions in inches and (millimeters)
Features
■ Mechanical data
■ Maximum ratings and electrical characteristics
Rating at 25
ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
OC
Outline
Surface mount type for automated replacement.
Ideal for printed board.
Low forward drop down voltage.
Reliable low cost construction utilizing molded plastic
technology results in inexpensive product.
Glass passivated chip junctions.
Suffix "G" indicates Halogen-free part, ex.DB101SG.
Lead-free parts meet RoHS requirments.
Surge overload ratings to 30 amperes peak.
DBS
• Case : Molded plastic, DBS
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : marked on body
• Mounting Position : Any
• Weight : Approximated 1.00 gram
• Epoxy:UL94-V0 rated flame retardant
DB101S THRU DB107S
1A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers
Operating temperature
O
T ( C)
J
-55 ~ +150
Max. forward voltage
O
@0.5A, T = 25 C
A
V (V)
F
Max. DC
blocking voltage
V (V)
R
Max.
RMS voltage
V
(V)
RMS
70
140
280
35
420
560
Max.
repetitive peak
reverse voltage
V
(V)
RRM
100
200
400
50
600
800
Marking code
DB102S
DB103S
DB104S
DB101S
DB105S
DB106S
Symbol
100
200
400
50
600
800
1.05
700
1000
DB107S
1000
Document ID : DS-22B23
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C
.255(6.5)
.130(3.30)
.406(10.3)
.013(.33)
.060(1.53)
.205(5.2)
.335(8.51)
.047(1.2)
.245(6.2)
.120(3.05)
.386(9.8)
.003(.076)
.040(1.02)
.195(5.0)
.320(8.13)
.040(1.02)
+
~
~
I
O
I
FSM
I
R
Forward rectified current
Forward surge current
Reverse current
Parameter
O
at TA = 25 C
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
O
V
= V
T
= 25 C
R
RRM
A
O
V
= V
T
= 125 C
R
RRM
A
Conditions
Symbol
MIN.
TYP.
MAX.
UNIT
500
10
1.0
30
A
A
uA
T
STG
Storage temperature
-55
+150
OC
2
I t
Current squared time
3.7
2
A S
R
θJA
Thermal resistance
68
OC/W
O
t < 8.3ms, T = 25 C
J
junction to ambient
DB102S
DB103S
DB104S
DB101S
DB105S
DB106S
DB107S


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