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DB101S 数据表(PDF) 1 Page - Chip Integration Technology Corporation |
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DB101S 数据表(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 3 page ![]() 1 Dimensions in inches and (millimeters) Features ■ ■ Mechanical data ■ Maximum ratings and electrical characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. OC Outline ■ Surface mount type for automated replacement. Ideal for printed board. Low forward drop down voltage. Reliable low cost construction utilizing molded plastic technology results in inexpensive product. Glass passivated chip junctions. Suffix "G" indicates Halogen-free part, ex.DB101SG. Lead-free parts meet RoHS requirments. • • • • • • • • Surge overload ratings to 30 amperes peak. DBS • Case : Molded plastic, DBS • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : marked on body • Mounting Position : Any • Weight : Approximated 1.00 gram • Epoxy:UL94-V0 rated flame retardant DB101S THRU DB107S 1A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers Operating temperature O T ( C) J -55 ~ +150 Max. forward voltage O @0.5A, T = 25 C A V (V) F Max. DC blocking voltage V (V) R Max. RMS voltage V (V) RMS 70 140 280 35 420 560 Max. repetitive peak reverse voltage V (V) RRM 100 200 400 50 600 800 Marking code DB102S DB103S DB104S DB101S DB105S DB106S Symbol 100 200 400 50 600 800 1.05 700 1000 DB107S 1000 Document ID : DS-22B23 Issued Date : 2010/05/05 Revised Date : 2012/05/31 Revision : C .255(6.5) .130(3.30) .406(10.3) .013(.33) .060(1.53) .205(5.2) .335(8.51) .047(1.2) .245(6.2) .120(3.05) .386(9.8) .003(.076) .040(1.02) .195(5.0) .320(8.13) .040(1.02) + ~ ~ I O I FSM I R Forward rectified current Forward surge current Reverse current Parameter O at TA = 25 C 8.3ms single half sine-wave superimposed on rate load (JEDEC method) O V = V T = 25 C R RRM A O V = V T = 125 C R RRM A Conditions Symbol MIN. TYP. MAX. UNIT 500 10 1.0 30 A A uA T STG Storage temperature -55 +150 OC 2 I t Current squared time 3.7 2 A S R θJA Thermal resistance 68 OC/W O t < 8.3ms, T = 25 C J junction to ambient DB102S DB103S DB104S DB101S DB105S DB106S DB107S |
类似零件编号 - DB101S |
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类似说明 - DB101S |
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