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DF101 数据表(PDF) 1 Page - Chip Integration Technology Corporation

部件名 DF101
功能描述  1A Miniature Glass Passivated Single-Phase Bridge Rectifiers
PDF  3 Pages
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制造商  CITC [Chip Integration Technology Corporation]
网页  http://www.citcorp.com.tw/english/index.php
标志 CITC - Chip Integration Technology Corporation

DF101 数据表(HTML) 1 Page - Chip Integration Technology Corporation

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1
Dimensions in inches and (millimeters)
Features
■ Mechanical data
■ Maximum ratings and electrical characteristics
Rating at 25
ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
OC
Outline
Recommended for non-automatic applications.
Ideal for & save space on printed circuit board.
Applicable for automatic insertion.
Reliable low cost construction utilizing molded plastic
technology results in inexpensive product.
Glass passivated chip junctions.
Suffix "G" indicates Halogen-free part, ex.DF101G.
Lead-free parts meet RoHS requirments.
Surge overload ratings to 30 amperes peak.
DF
• Case : Molded plastic, DF
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : marked on body
• Mounting Position : Any
• Weight : Approximated 0.38 gram
• Epoxy:UL94-V0 rated flame retardant
DF101 THRU DF107
1A Miniature Glass Passivated Single-Phase Bridge Rectifiers
Operating temperature
O
T ( C)
J
-55 ~ +150
Max. forward voltage
O
@0.5A, T = 25 C
A
V (V)
F
Max. DC
blocking voltage
V (V)
R
Max.
RMS voltage
V
(V)
RMS
70
140
280
35
420
560
Max.
repetitive peak
reverse voltage
V
(V)
RRM
100
200
400
50
600
800
Marking code
DF102
DF103
DF104
DF101
DF105
DF106
Symbol
DBL102
DBL103
DBL104
DBL101
DBL105
DBL106
100
200
400
50
600
800
1.05
700
1000
DF107
DBL107
1000
Document ID : DS-21B25
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C
.256(6.5)
.094(2.4)
.185(4.69)
.350(8.9)
.205(5.2)
.335(8.51)
.244(6.2)
.091(2.3)
.150(3.81)
.299(7.6)
.197(5.0)
.320(8.13)
.080(2.03)
.050(1.27)
+
~
~
-
.023(0.58)
.018(0.46)
.013(0.33)
.009(0.22)
I
O
I
FSM
I
R
Forward rectified current
Forward surge current
Reverse current
Parameter
O
at TA = 25 C
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
O
V
= V
T
= 25 C
R
RRM
A
O
V
= V
T
= 125 C
R
RRM
A
Conditions
Symbol
MIN.
TYP.
MAX.
UNIT
500
10
1.0
30
A
A
uA
T
STG
Storage temperature
-55
+150
OC
2
I t
Current squared time
3.7
2
A S
R
θJA
Thermal resistance
68
OC/W
O
t < 8.3ms, T = 25 C
J
junction to ambient


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