TSM006

Electrical Characteristics

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3

Electrical Characteristics

Tamb = 25°C, Vin=15V, Rt=39k, Ct=470pF, Rex=27k, Cfm=1nF unless otherwise specified

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

Main oscillator

Fosco

FoscL

Lower oscillating frequency

Upper oscillating frequency

8

≤Vin≤20V, 0≤Ta≤105°C

Vfm=GND

Vfm=Vref

63

57.6

68

62

73

66.4

kHz

kHz

Fjit

Frequency jitter

Fjit=Fosco - FoscL

6

7

8

kHz

Ffm

Frequency modulation

4.5

kHz

Vthct

Upper trip point

Vfm=GND

3.0

V

Vtlct

Lower trip point

Vfm=GND

1.4

V

∆Vct

Amplitude

Vfm=GND

1.6

V

Idct1

Discharge current

Vct=2V

300

µA

Idct2

Current at Ct in UVLO

Vct=1V

1

3

mA

Disable

Vdis

Voltage threshold

2.5

2.65

2.8

V

Vref reference pin

Vref

Voltage reference

4.91

5.00

5.09

V

∆Vline

Line regulation

12V

≤ Vin ≤ 20V

5

10

mV

∆Vload

Load regulation

1mA

≤ Iref ≤ 5mA

10

20

mV

∆Vtotal

Total variation

Line, load, temp

4.85

5.00

5.15

V

Ios

Short circuit current

Vref=0

10

mA

Slope Compensation

IsinkCP

Sink current

Vct=2.2V, VCslope=1V

90

µA

IsrcCP

Source current

Vct=2.2V, VCslope=0V

2

mA

Comp

Icomp

Source current

Vcomp=5V

0.5

0.6

0.7

mA

Current sense

Avcs

Gain

0V

≤ Vcs ≤ 0.8V

2.85

3.00

3.15

Vz1

Maximum sensing voltage

Vcomp=5V

0.9

1.0

1.1

V

PSRR

Power supply voltage rejection ratio

8V

≤ Vin ≤ 20V

70

dB

Leading edge blanking

LEB

Delay to output

Vcs = 0 to 2 V

Vcomp=2V

280

ns

Output

VOL1

Output low voltage 1

Iosink=20mA

1.0

V

VOL2

Output low voltage 2

Iosink=200mA

0.8

2.2

V

VOH1

Output high voltage 1

Iosource=20mA

Vin-2.0

V

VOH2

Output high voltage 2

Iosource=200mA

Vin-3.0

V

tr

Rise time

CL=1nF, 10% to 90%

70

100

ns

tf

Fall time

CL=1nF, 90% to 10%

40

60

ns

VOL3

UVLO saturation

Vin=5V, Iosink=1mA

0.5

V

Fout

Output frequency

Option 1

Fosc

kHz

DCmax

Maximum Duty Cycle

Option 1

77.5

%