T330P

www.vishay.com

Vishay Semiconductors

Rev. 1.2, 22-May-14

2

Document Number: 83490

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• The measurements are based on samples of die which are mounted on a TO-header without resin coating

Fig. 1 - Diode Capacitance vs. Reverse Voltage

Fig. 2 - Relative Spectral Sensitivity vs. Wavelength

Note

• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.

The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip

backside is performed with stereo microscope with incident light and 40x to 80x magnification.

The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure

by QM is not installed.

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Breakdown voltage

60

V

Reverse dark current

0.1

3

nA

Diode capacitance

1.3

pF

Reverse light current

2.3

μA

Angle of half sensitivity

ϕ

± 60

deg

Wavelength of peak sensitivity

900

nm

Range of spectral bandwidth

430 to 1100

nm

Rise time

Ω, λ = 820 nm

4ns

Fall time

Ω, λ = 820 nm

4ns

0

2

4

6

8

0.1

V

94 8430

E = 0

f = 1 MHz

100

10

1

350

550

750

950

0

0.2

0.4

0.6

0.8

1.0

1150

94 8420

λ - Wavelength (nm)

MECHANICAL DIMENSIONS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Length of chip edge (x-direction)

0.67

mm

Length of chip edge (y-direction)

0.67

mm

Sensitive area

0.23

Wafer diameter

D

100

mm

Die height

H

0.265

0.28

0.295

mm

Bond pad anode

x * y

0.1 x 0.1

ADDITIONAL INFORMATION

Frontside metallization, anode

AlSi

Backside metallization, cathode

NiV-Ag

Dicing

Sawing

Die bonding technology

Epoxy bonding