STPS3150SLASHU datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STPS3150/U

3/5

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

SMB

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 4-1: Relative variation of thermal impedance

junction to ambient versus pulse duration (SMB).

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

DO-201AD

Fig. 4-2: Relative variation of thermal impedance

junction

ambient

versus

pulse

duration

(DO-201AD).

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values).

C(nF)

100

1000

100

1000

F=1MHz

=30mV

T =25°C

OSC

RMS

V (V)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values).

(A)

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

(V)

T =25°C

(maximum values)

T =125°C

(typical values)

T =125°C

(maximum values)

Fig. 7: Forward voltage drop versus forward

current.

(°C/W)

th(j-a)

100

110

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

S(cm²)

SMB

Fig. 8: Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy

printed circuit board FR4, Cu: 35µm) (SMB).

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