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STGP12NB60K 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGP12NB60K
功能描述  N-CHANNEL 18A - 600V TO-220 SHORT CIRCUIT PROOF PowerMESH™ IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP12NB60K 数据表(HTML) 2 Page - STMicroelectronics

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STGP12NB60K
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ABSOLUTE MAXIMUM RATINGS
( ) Pulsewidth limitedby safeoperating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC = 25°C (#)
30
A
IC
Collector Current (continuous) at TC = 100°C (#)
18
A
ICM ( )
Collector Current (pulsed)
60
A
Tsc
Short Circuit Withstand
10
µs
PTOT
Total Dissipation at TC = 25°C
125
W
Derating Factor
1.0
W/°C
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
Rthj-case
Thermal Resistance Junction-case Max
1.0
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC =250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE =0)
VCE = Max Rating, TC =25 °C
VCE = Max Rating, TC = 125 °C
50
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE = ± 20V , VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC =250 µA
57
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC =12 A
VGE =15V,IC =12A, Tj =125°C
2.2
1.7
2.8
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25 V , IC =12 A
5S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE =25V,f=1 MHz,VGE =0
890
110
22
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE =480V, IC =12 A,
VGE = 15V
54
8
31
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , VGE =15V,
Tj = 125°C , RG =10 Ω
48
A
Twsc
Short Circuit WITHSTAND
Time
VCE =0.5 BVces , VGE =15 V
Tj = 125°C , RG =10 Ω
10
µs



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