IXFN34N80 datasheet(1/4 Pages) IXYS

部件名	IXFN34N80

功能描述	HiPerFETTM Power MOSFETs Single DieMOSFET

PDF	4 Pages

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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D

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate

D = Drain

S = Source

Either Source terminal of miniBLOC can be used

as Main or Kelvin Source

Features

· Internationalstandardpackages

· miniBLOC,withAluminiumnitride

isolation

· Low R

DS (on) HDMOS

TM process

· Rugged polysilicon gate cell structure

· Unclamped Inductive Switching (UIS)

rated

· Low package inductance

· Fast intrinsic Rectifier

Applications

· DC-DC converters

· Battery chargers

· Switched-modeandresonant-mode

power supplies

· DC choppers

· Temperatureandlightingcontrols

Advantages

· Easy to mount

· Space savings

· High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 3 mA

800

V

DSS temperature coefficient

0.096

%/K

V

GS(th)

V

DS

= V

GS, ID = 8 mA

3.0

5.0

V

GS(th) temperature coefficient

-0.214

%/K

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

mA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

Pulse test, t

£ 300 ms,

0.24

W

duty cycle d

£ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MW

800

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C34

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

136

A

I

AR

34

A

E

AR

T

C = 25°C64

mJ

E

AS

T

C = 25°C3

J

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS,

5

V/ns

T

J

£ 150°C, R

G = 2 W

P

D

T

C

= 25

°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL£ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

HiPerFETTM Power MOSFETs

Single DieMOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

98529D (6/99)

Preliminary data sheet

IXFN 34N80

V

DSS

= 800 V

I

D25

= 34 A

R

DS(on) = 0.24 W

t

rr £ 250 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

类似零件编号 - IXFN34N80

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN34N100	101Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET

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IXFN34N80 数据表(PDF) 1 Page - IXYS Corporation

IXFN34N80 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN34N80

类似说明 - IXFN34N80

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IXFN34N80 数据表(PDF) 1 Page - IXYS Corporation

IXFN34N80 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN34N80

类似说明 - IXFN34N80

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数据表下载