IXFN280N07 datasheet(1/2 Pages) IXYS

部件名	IXFN280N07

功能描述	HiPerFET Power MOSFETs Single Die MOSFET

PDF	2 Pages

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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Features

•Internationalstandardpackages

•miniBLOC, withAluminiumnitride

isolation

•Low R

DS (on) HDMOS

TM process

•Ruggedpolysilicongatecellstructure

•UnclampedInductiveSwitching(UIS)

rated

•Lowpackageinductance

•FastintrinsicRectifier

Applications

• DC-DC converters

• Synchronousrectification

• Batterychargers

• Switched-modeandresonant-mode

power supplies

• DC choppers

• Temperatureandlightingcontrols

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

D = 3 mA

70

V

GH(th)

V

DS

= V

GS, ID = 8 mA

2.0

4.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200 nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

µA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 120A

5 m

Ω

Pulse test, t

≤ 300 µs,

duty cycle d

≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C70

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

70

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C, Chip capability280

A

I

L(RMS)

Terminal current limit

100

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

1120

A

I

AR

T

C

= 25

°C

180

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

HiPerFETTM

Power MOSFETs

Single Die MOSFET

98555B (1/02)

D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

IXFN 280N07

V

DSS

=

70

V

I

D25

=

280

A

R

DS(on) =

5 m

Ω

N-Channel Enhancement Mode

t

rr

<

250 ns

Avalanche Rated, High dv/dt, Low t

rr

Preliminary data sheet

类似零件编号 - IXFN280N07

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN280N07	119Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET

More results

类似说明 - IXFN280N07

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More results

IXFN280N07 数据表(PDF) 1 Page - IXYS Corporation

IXFN280N07 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN280N07

类似说明 - IXFN280N07

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链接网址

IXFN280N07 数据表(PDF) 1 Page - IXYS Corporation

IXFN280N07 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXFN280N07

类似说明 - IXFN280N07

Html Pages

1 2

数据表 下载

链接网址

数据表下载