QPD1025LS2 datasheet(1/18 Pages) TRIQUINT

部件名	QPD1025LS2

功能描述	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

PDF	18 Pages

Scroll/Zoom	100%

制造商	TRIQUINT [TriQuint Semiconductor]

网页	http://www.triquint.com

标志

1 / 18 page

QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

- 1 of 18 -

www.qorvo.com

4-lead NI-1230 Package (Eared)

Product Overview

The Qorvo QPD1025L is a 1500 W (P3dB) discrete GaN on

SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-

match within the package results in ease of external board

match and saves board space. The device is in an industry

standard air cavity package and is ideally suited for IFF,

avionics and test instrumentation. The device can support

both CW and pulsed operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram

Key Features

• Frequency: 1.0 to 1.1 GHz

• Output Power (P3dB)1: 1660 W

• Linear Gain1: 22.9 dB

• Typical PAE3dB1: 78.5%

• Operating Voltage: 65 V

• CW and Pulse capable

Note 1: @ 1.0 GHz Load Pull

Applications

• IFF Transponders

• Avionics

Ordering info

Part No.

ECCN Description

QPD1025L

EAR99

1.0

– 1.1 GHz Transistor

QPD1025LS2

EAR99

2 Piece Sample Bag

QPD1025LEVB1

EAR99

1.0

– 1.1 GHz Evaluation Board

类似零件编号 - QPD1025LS2

制造商	部件名	数据表	功能描述
Qorvo, Inc	QPD1025L	3Mb / 27P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor
	QPD1025L	3Mb / 26P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor March 2022
	QPD1025LEVB1	3Mb / 27P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor
	QPD1025LEVB1	3Mb / 26P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor March 2022
	QPD1025LEVB2	3Mb / 27P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

More results

类似说明 - QPD1025LS2

制造商	部件名	数据表	功能描述
TriQuint Semiconductor	QPD1025	1Mb / 18P	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor
Qorvo, Inc	QPD1025L	3Mb / 27P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor
	TGF2965-SM	1Mb / 21P	5 W, 32 V, 0.03?? GHz, GaN RF Input-Matched Transistor
	TGF3015-SM	1Mb / 20P	10 W, 32 V, 0.03 ??3 GHz, GaN RF Input-Matched Transistor
	QPD1029L	1Mb / 16P	1500 W, 65 V, 1.2??1.4GHz, GaN RF Input-Matched Transistor Sep 2019
	QPD1025L	3Mb / 26P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor March 2022
	QPD1028L	1Mb / 16P	750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor Oct 2021
	QPD1025	3Mb / 26P	1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor April 2022
	QPD1026L	1Mb / 19P	1300 W, 65 V, 420 ??450 MHz, GaN RF Input-Matched Transistor December 2018
	QPD1028	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021