ELECTRICAL CHARACTERISTICS

PULSE CHARACTERISTICS

THERMAL CHARACTERISTICS

RUGGEDNESS PERFORMANCE

1

NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10%

point of the pulse with pulse width = 10 sec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad-

band matched test xture.

2

NOTE: Amount of gate voltage required to attain nominal quiescent current.

Symbol Parameter

Conditions

Min

Typical Max

Unit

Drain-Source Breakdown VGS=0V,ID=5mA

95

102

-

V

Drain Leakage Current

VGS=0V,VDS=48V

-

50

200

A

Gate Leakage Current

VGS=5V,VDS=0V

-

1

5

A

Power Gain

F=1150MHz

17.5

19.5

-

dB

Input Return Loss

F=1150MHz

-

-7

-4

dB

D1

F=1150MHz

46

48

-

%

VDD=50V,IDQ=100mA

1.1

1.45

1.8

V

VTH

Threshold Voltage

VDD=5V, ID=300 A

0.7

1.2

1.7

V

Symbol Parameter

Conditions

Min

Typical Max

Unit

Rise Time

F=1150MHz

-

<40

50

nS

Fall Time

F=1150MHz

-

<15

50

nS

Pulse Droop

F=1150MHz

-

0.25

0.5

dB