ASIPT9700 datasheet(1/1 Pages) ASI

部件名	ASIPT9700

功能描述	NPN SILICON RF POWER TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 1.0 mA

45

V

BVCEO

IC = 20 mA

24

V

BVEBO

IE = 0.25 mA

3.5

V

ICBO

VCB = 28 V

0.45

mA

hFE

VCE = 5.0 V

IC = 100 mA

15

120

---

Cob

VCB = 28 V

f = 1.0 MHz

5.0

pF

PG

ηηηη

D

VCC = 28 V

POUT = 1.0 W

f = 400 MHz

13

60

dB

%

NPN SILICON RF POWER TRANSISTOR

PT9700

DESCRIPTION:

The

ASI PT9700 is Designed for

High Power Class C Amplifier, in 225

to 400 MHz Military Communication

Equipment.

FEATURES:

• Class C Operation

• P

G = 13 dB at 1.0 W/400 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

2.0 A

VCBO

45 V

VCEO

25 V

VEBO

3.5 V

PDISS

31.8 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θθθθ

JC

20 °C/W

PACKAGE STYLE .280 4L STUD

MINIMUM

inches / mm

.003 / 0.08

.270 / 6.86

.117 / 2.97

B

C

D

E

F

G

A

MAXIMUM

.285 / 7.24

.137 / 3.48

.007 / 0.18

inches / mm

H

.245 / 6.22

.255 / 6.48

DIM

1.010 / 25.65

1.055 / 26.80

I

J

.217 / 5.51

.220 / 5.59

K

.175 / 4.45

.285 / 7.24

.275 / 6.99

.572 / 14.53

.640 / 16.26

.130 / 3.30

.230 /5.84

G

K

H

F

E

D

C

B

45°

A

#8-32 UNC

I

J

C

B

E

类似零件编号 - ASIPT9700

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