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STTH3002 数据表(PDF) 4 Page - STMicroelectronics |
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STTH3002 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() STTH3002C 4/7 0 10 20 30 40 50 60 70 10 100 1000 t(ns) rr dI /dt(A/µs) F T =25°C j T =125°C j I =15A F V =160V R Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode). 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 10 100 1000 I(A) RM dI /dt(A/µs) F T =25°C j T =125°C j I =15A F V =160V R Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 IRM Qrr T (°C) j Qrr;I [T ]/Qrr;I [T =125°C] RM j RM j I =15A F V =160V R Fig. 8: Dynamic parameters versus junction temperature. 0 10 20 30 40 50 60 70 80 02468 10 12 14 16 18 20 S(Cu)(cm²) R (°C/W) th(j-a) Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU: 35µm) for D 2PAK. |
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