2003 May 14

2

Philips Semiconductors

Product specification

Base station LDMOS transistor

BLF1049

FEATURES

• Typical performance at a supply voltage of 27 V:

– Output power = 125 W

– Gain = 16.5 dB

– Efficiency = 54%

– EDGE output power = 45 W (AV)

– ACPR400 =

−64 dBc at 400 kHz

– EVM = 2% rms (AV)

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (800 to 1000 MHz)

• Internally matched for ease of use.

APPLICATIONS

• RF power amplifier for GSM, EDGE and CDMA base

stations and multicarrier applications in the

800 to 1000 MHz frequency range.

DESCRIPTION

125 W LDMOS power transistor for base station

applications at frequencies from 800 MHz to 1000 MHz.

PINNING - SOT502A

PIN

DESCRIPTION

1

drain

2

gate

3

source; connected to flange

handbook, halfpage

Top view

MBK394

1

2

3

Fig.1 Simplified outline SOT502A .

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

MODE OF OPERATION

f

(MHz)

(W)

(dB)

η

D

(%)

(dBc)

ACPR 400

(dBc)

EVM

% rms

(AV)

2-tone

920

125 (PEP)

15.5

37

−32

−−

1-tone CW

125

16.5

54

−−−

GSM EDGE

45 (AV)

15

32

−−64

2

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

drain-source voltage

−

75

V

gate-source voltage

−±15

V

storage temperature

−65

150

°C

junction temperature

−

200

°C