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JCS3N25RT-O-R-N-A 数据表(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS3N25RT-O-R-N-A 数据表(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 12 page ![]() R JCS3N25T 版本:201510G 5/12 特征曲线 ELECTRICAL CHARACTERISTICS (curves) 1 10 1 10 V GS Top 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes: 1. 250μs pulse test 2. T C=25 ℃ V DS [V] 2 4 6 8 10 0.1 1 10 Notes: 1.250μs pulse test 2.V DS=40V 25℃ V GS [V] 150℃ 0 2 4 6 8 10 12 14 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 Note :T j=25 ℃ V GS=10V V GS=20V I D [A] 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Notes: 1. 250μs pulse test 2. V GS=0V 25℃ 150℃ V SD [V] 10 -1 10 0 10 1 0.0 5.0x10 1 1.0x10 2 1.5x10 2 2.0x10 2 2.5x10 2 3.0x10 2 C iss =Cgs+Cgd (Cds=shorted) C oss =Cds+Cgd C rss =Cgd V DS Drain-Source Voltage [V] 0 2 4 6 8 10 12 0 1 2 3 4 5 V DS=200V V DS=125V V DS=50V Q g Toltal Gate Charge [nC] On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics |
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