MB05M datasheet(1/2 Pages) GXELECTRONICS

部件名	MB05M

功能描述	Rectifier Reverse Voltage 50 to 1000V

PDF	2 Pages

Scroll/Zoom	100%

制造商	GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]

网页	http://www.sddzg.com

标志

1 / 2 page

MB10M

MB8M

MB6M

MB4M

MB2M

MB1M

MB05M thru MB10M

MB05M

n

8

.

0 A Si gle-Phase Glass Passivated Bridge Rectifiers

Rectifier Reverse Voltage 50 to 1000V

Maximum Ratings & Thermal Characteristics

Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.

For Capacitive load derate current by 20%.

Parameter

Symbol

unit

Maximum repetitive peak reverse voltage

Maximum RMS bridge input voltage

Maximum DC blocking voltage

Maximum average forward rectified

output current at TA=40 C

Peak forward surge current single sine-wave

superimposed on rated load (JEDEC Method)

Rating for fusing ( t<8.3ms)

Typical thermal resistance per element (1)

Typical junction capacitance per element (2)

Operating junction and storage temperature

range

Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.

For Capacitive load derate by 20 %.

Parameter

Symbol

Unit

Maximum instantaneous forward voltage drop

per leg at 1.0A

Maximum DC reverse current at rated TA =25 C

DC blocking voltage per element

TA =125 C

VRRM

VRMS

VDC

IF(AV)

I t

2

IFSM

ReJA

TJ,

TSTG

VF

IR

50

100

200

400

800

1000

600

35

70

140

280

420

560

700

50

100

200

400

600

800

1000

30

110

-55 to + 150

1.1

10

500

V

A

C /W

V

A

2

sec

0.8

19.0

p

F

Cj

Features

Mechanical Data

The plastic material used carries Underwriters

Laboratory flammability recognition 94V-0

Surge overload ratings to 30 amperes

High temperature soldering guaranteed 260 C/5

seconds at 5 lbs (2.3kg) tension

Case: Molded plastic

Terminals: Plated leads solderable per MIL-STD-202,

Method 208

Mounting Position: Any

Weight: 0.125 grams (approx)

Ideal for surface mount application

Polarity: Marked on body

8.73

A

Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.

(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.

(3)R-load on aluminum substrate TA=25 C.

Dimensions in millimeters(1mm =0.0394")

This series is UL listed under the Recognized

Component Index, file number E142814

C

0.6± 0.1

3.8± 0.2

4.6± 0.2

2.5± 0.25

5.5± 0.2

0.2± 0.05

6.2± 0.2

MBM

MB10M

MB8M

MB6M

MB4M

MB2M

MB1M

MB05M

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

星合电子

1

ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ　ＣＯ．，ＬＴＤ．　　　　　　　　　　　　　　　　　　　　　　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ

类似零件编号 - MB05M

制造商	部件名	数据表	功能描述
Micro Commercial Compon...	MB05M	101Kb / 2P	0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
Shanghai Lunsure Electr...	MB05M	70Kb / 2P	0.5Amp single phase glass passivated bridge retifier 50to1000 volts
Guangdong Juxing Electr...	MB05M	1Mb / 2P	BRIDGE RECTIFIERS
DONGGUAN YOU FENG WEI E...	MB05M	82Kb / 2P	Miniature Glass Passivated Single-Phase Bridge Rectifier
GUANGDONG HOTTECH INDUS...	MB05M	269Kb / 2P	Plastic-Encapsulate Bridge Rectifier

More results

类似说明 - MB05M

制造商	部件名	数据表	功能描述
Leshan Radio Company	SN1A	177Kb / 9P	Surface Mount General Reverse Voltage 50 to 1000V
Leshan Radio Company	UF4007	289Kb / 7P	Reverse Voltage 50 to 1000V Forward Current 1.0A
Gaomi Xinghe Electronic...	KBP4005	469Kb / 2P	Rectifier Reverse Voltage 50 to 1000V
AiT Semiconductor Inc.	DB201S	533Kb / 5P	BRIDGE RECTIFIER REVERSE VOLTAGE 50 TO 1000V FORWARD CURRENT 2.0 A REV1.0
	FM401	503Kb / 5P	GLASS RECTIFIER DIODES REVERSE VOLTAGE 50 TO 1000V FORWARD CURRENT1.0A REV1.0
	GS1A	439Kb / 5P	RECTIFIER DIODES REVERSE VOLTAGE 50 TO 1000V FORWARD CURRENT 1.0A REV1.0
	S1A	468Kb / 5P	RECTIFIER DIODE 50 ~1000V REVERSE VOLTAGE 1A CURRENT REV1.0
	S1AF	551Kb / 5P	RECTIFIER DIODE REVERSE VOLTAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0
	S1AW	693Kb / 5P	RECTIFIER DIODE REVERSE VOLTAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0
	S3AF	590Kb / 5P	RECTIFIER DIODE 50~1000V REVERSE VOLTAGE 3A CURRENT REV1.0